![Silicon Avalanche Based Light Emitting Diodes and Their Potential Integration into CMOS and RF Integrated Circuit Technology | IntechOpen Silicon Avalanche Based Light Emitting Diodes and Their Potential Integration into CMOS and RF Integrated Circuit Technology | IntechOpen](https://www.intechopen.com/media/chapter/47465/media/image2.png)
Silicon Avalanche Based Light Emitting Diodes and Their Potential Integration into CMOS and RF Integrated Circuit Technology | IntechOpen
![Calculate the value of `V_(0)` and `I` If the Si diode and the Ge diode start conducting ar 0.2 V - YouTube Calculate the value of `V_(0)` and `I` If the Si diode and the Ge diode start conducting ar 0.2 V - YouTube](https://i.ytimg.com/vi/QjVukXTAmVc/maxresdefault.jpg)
Calculate the value of `V_(0)` and `I` If the Si diode and the Ge diode start conducting ar 0.2 V - YouTube
![Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by : (assume that Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by : (assume that](https://toppr-doubts-media.s3.amazonaws.com/images/4803840/fc0431b4-7f50-4450-b34d-2d62b955f96b.jpg)
Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by : (assume that
![Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by : (assume that Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by : (assume that](https://dwes9vv9u0550.cloudfront.net/images/5026722/8bbd8a37-ce8a-40d5-b5be-6e613f9ee3eb.jpg)