Vertical p-n diodes on bulk gallium nitride result in avalanche
Review of Recent Progress on Vertical GaN-Based PN Diodes | Nanoscale Research Letters | Full Text
Fully vertical gallium nitride p-i-n diode grown on silicon substrate
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown: Applied Physics Letters: Vol 107, No 24
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes | HTML
Gallium nitride vertical junction barrier Schottky diodes
Typical current-voltage characteristics of the Au/n-GaN diode at room... | Download Scientific Diagram
Structure of the Al0.27Ga0.73N/GaN diode under study. | Download Scientific Diagram
Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment - ScienceDirect
Review of Recent Progress on Vertical GaN-Based PN Diodes | Nanoscale Research Letters | Full Text
Study of a GaN Schottky diode based hydrogen sensor with a hydrogen peroxide oxidation approach and platinum catalytic metal - ScienceDirect
Review of Recent Progress on Vertical GaN-Based PN Diodes | Nanoscale Research Letters | Full Text
Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings
Panasonic claims 7.6kA/cm² for a GaN diode
Deep levels in n-type Schottky and p+-n homojunction GaN diodes | Materials Research Society Internet Journal of Nitride Semiconductor Research | Cambridge Core
a) Layout design of AlGaN/GaN Schottky Barrier Diode with Gated Edge... | Download Scientific Diagram
Cutting leakage in gallium nitride vertical diodes on silicon
Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties | Scientific Reports
Review of Recent Progress on Vertical GaN-Based PN Diodes | Nanoscale Research Letters | Full Text
Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode - IOPscience
Thin-film GaN Schottky diodes formed by epitaxial lift-off: Applied Physics Letters: Vol 110, No 17
GaN-Based Schottky Diode | IntechOpen
Electrical properties and carrier transport mechanism in V/p-GaN Schottky diode at high temperature range - ScienceDirect
The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors | Scientific Reports
![PDF] Different Isolation Processes for Free-Standing GaN p-n Power Diode With Ultra-High Current Injection | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/3fc0fdfa0dc5dd6e5e56240c0dcf4ce09f8aa1a7/2-Figure1-1.png "PDF] Different Isolation Processes for Free-Standing GaN p-n Power Diode With Ultra-High Current Injection | Semantic Scholar")
PDF] Different Isolation Processes for Free-Standing GaN p-n Power Diode With Ultra-High Current Injection | Semantic Scholar
Switching performance of quasi‐vertical GaN‐based p‐i‐n diodes on Si - Zhang - 2017 - physica status solidi (a) - Wiley Online Library
